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Power Protection
Power Protection
SCT53600QTVDR
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Ideal Diode Controller with Reverse-Current Protection
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- Product Introduction
- Technical data
- Parameter comparison
Product Features
FEATURES：
- Qualified for Automotive Applications
- AEC-Q100 Qualified with the Following Results:
- - Device Temperature Grade 1: -40°C to 125°C Ambient Operating Temperature Range
- - Device CDM ESD Classification Level C3B
- 4.8V to 65V Operating Range
- –65V Reverse voltage rating
- Charge pump for external N-Channel MOSFET
- 20mV ANODE to CATHODE forward voltage drop regulation
- 12V Gate Drive Voltage
- With Enable Input
- Drive High Side External N-Channel MOSFET
- 1μA Shutdown current (EN=Low)
- 60μA Operating quiescent current (EN=High)
- 2.3-A Peak gate turnoff current
- Fast reverse current turn-off within 0.75us
- Meets automotive ISO7637 transient requirements with a suitable TVS Diode
- Available in an SOT23-6L Package
DESCRIPTION：
The SCT53600Q is an ideal diode controller which paired with an external N-channel MOSFET as an ideal diode rectifier for low loss reverse polarity protection to replace a Schottky Diode. The SCT53600Q operates over a wide supply voltage range of 4.7V to 65V. The device can withstand and protect the load against damaging from negative supply voltages down to –65 V and blocks reverse current flow helping to simplify the system designs for automotive ISO7637 protection.
The SCT53600Q controller provides a charge pump gate drive for an external N-channel MOSFET. The device regulates the forward voltage drop across the external MOSFET to 20mV allowing smooth, ring-free operation with providing very fast turn-off(< 0.75 μs) of the MOSFET during a reverse event to minimize reverse current if power source fails or input micro-short conditions. The fast response to Reverse Current Blocking makes the device suitable for systems with output voltage holdup requirements during ISO7637 pulse testing.
The SCT53600Q consumes only 1μA of current during shutdown mode with the enable pin low to extend battery life. The device is available in an SOT23-6 package.
The SCT53600Q controller provides a charge pump gate drive for an external N-channel MOSFET. The device regulates the forward voltage drop across the external MOSFET to 20mV allowing smooth, ring-free operation with providing very fast turn-off(< 0.75 μs) of the MOSFET during a reverse event to minimize reverse current if power source fails or input micro-short conditions. The fast response to Reverse Current Blocking makes the device suitable for systems with output voltage holdup requirements during ISO7637 pulse testing.
The SCT53600Q consumes only 1μA of current during shutdown mode with the enable pin low to extend battery life. The device is available in an SOT23-6 package.
APPLICATIONS：
- Automotive Battery Protection
- Redundant Power Supplies
- Industrial Factory Automation
- Enterprise Power Supplies
- Network Telecom Power Systems
- Servers
Package information
Technical data
| Title | Time | Download |
|---|---|---|
| SCT53600Q Datasheet Rev 1.4.pdf | 2024-12-23 |
 Download
|
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